Parameters | |
---|---|
Turn On Delay Time | 9.8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.9m Ω @ 56A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3150pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 56A Tc |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Rise Time | 13ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 32 ns |
Factory Lead Time | 1 Week |
Continuous Drain Current (ID) | 56A |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Threshold Voltage | 3V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 20V |
Number of Pins | 3 |
Pulsed Drain Current-Max (IDM) | 520A |
Weight | 3.949996g |
DS Breakdown Voltage-Min | 40V |
Transistor Element Material | SILICON |
Height | 2.39mm |
Operating Temperature | -55°C~175°C TJ |
Length | 6.73mm |
Packaging | Tape & Reel (TR) |
Width | 6.22mm |
Published | 2007 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Series | HEXFET®, StrongIRFET™ |
JESD-609 Code | e3 |
Lead Free | Lead Free |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 98W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |