IRFS31N20DTRLP
| Parameters | |
|---|---|
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 31A |
| Threshold Voltage | 5.5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Dual Supply Voltage | 200V |
| Avalanche Energy Rating (Eas) | 420 mJ |
| Nominal Vgs | 5.5 V |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Height | 4.826mm |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Length | 10.668mm |
| Number of Pins | 3 |
| Width | 9.65mm |
| Transistor Element Material | SILICON |
| Radiation Hardening | No |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| REACH SVHC | No SVHC |
| Series | HEXFET® |
| RoHS Status | ROHS3 Compliant |
| Part Status | Not For New Designs |
| Lead Free | Lead Free |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 82mOhm |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 31A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta 200W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 82m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 31A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
| Rise Time | 38ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
See Relate Datesheet
