Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Supplier Device Package | D2PAK |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Power Dissipation | 230W |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 4520pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Rise Time | 46ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 77 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 120A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Input Capacitance | 4.52nF |
Drain to Source Resistance | 4.2mOhm |
Rds On Max | 4.2 mΩ |
Nominal Vgs | 4 V |
Height | 4.826mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |