IRFS33N15DTRLP
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 21 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 33A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.056Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | 150V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 33A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.8W Ta 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 56m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2020pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 33A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Rise Time | 38ns |
See Relate Datesheet
