banner_page

IRFS3607TRLPBF

MOSFET N-CH 75V 80A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFS3607TRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 274
  • Description: MOSFET N-CH 75V 80A D2PAK (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 1 Week
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Fall Time (Typ) 96 ns
Turn-Off Delay Time 43 ns
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain-source On Resistance-Max 0.009Ohm
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Drain to Source Breakdown Voltage 75V
Height 4.826mm
Packaging Tape & Reel (TR)
Length 10.668mm
Published 2012
Width 9.65mm
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good