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IRFS4010-7PPBF

MOSFET N-CH 100V 190A D2PAK-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFS4010-7PPBF
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Datasheet: PDF
  • Stock: 352
  • Description: MOSFET N-CH 100V 190A D2PAK-7 (Kg)

Details

Tags

Parameters
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9830pF @ 50V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 56ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 100 ns
Reverse Recovery Time 60 ns
Continuous Drain Current (ID) 190A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 100V
Mount Surface Mount
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 330 mJ
Nominal Vgs 4 V
Mounting Type Surface Mount
Height 4.55mm
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Length 10.67mm
Width 9.65mm
Number of Pins 7
Transistor Element Material SILICON
Radiation Hardening No
REACH SVHC No SVHC
Operating Temperature -55°C~175°C TJ
RoHS Status ROHS3 Compliant
Packaging Tube
Lead Free Lead Free
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
See Relate Datesheet

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