Parameters | |
---|---|
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Configuration | Single |
Power Dissipation-Max | 380W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 380W |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4m Ω @ 110A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9830pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 190A Tc |
Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
Rise Time | 56ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 48 ns |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 190A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Nominal Vgs | 4 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Number of Pins | 7 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |