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IRFS4229PBF

IRFS4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFS4229PBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 661
  • Description: IRFS4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Nominal Vgs 5 V
Height 4.572mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 48m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 45A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Dual Supply Voltage 250V
Recovery Time 290 ns
See Relate Datesheet

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