Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 9MOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRFS4410 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 230W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9m Ω @ 58A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 4820pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 97A Tc |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Rise Time | 52ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 57 ns |
Continuous Drain Current (ID) | 97A |
Drain to Source Breakdown Voltage | 100V |
Avalanche Energy Rating (Eas) | 242 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |