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IRFS4510PBF

MOSFET N-CH 100V 61A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFS4510PBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 772
  • Description: MOSFET N-CH 100V 61A D2PAK (Kg)

Details

Tags

Parameters
Continuous Drain Current (ID) 61A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 3 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.9m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 50V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
See Relate Datesheet

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