banner_page

IRFS540A

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Nocochips NO: 699-IRFS540A
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 465
  • Description: N-CHANNEL POWER MOSFET (Kg)

Details

Tags

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 39W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.71pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 385 mJ
RoHS Status ROHS3 Compliant
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good