banner_page

IRFS5615TRLPBF

MOSFET N-CH 150V 33A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFS5615TRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 777
  • Description: MOSFET N-CH 150V 33A D2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 144W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 144W
Case Connection DRAIN
Turn On Delay Time 8.9 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 42m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 50V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 23.1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13.1 ns
Turn-Off Delay Time 17.2 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 150V
Height 4.826mm
Length 10.668mm
Width 9.652mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good