Parameters | |
---|---|
Recovery Time | 37 ns |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Number of Pins | 7 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 231W Tc |
Element Configuration | Single |
Power Dissipation | 231W |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.4m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 7437pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 195A Tc |
Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
Rise Time | 62ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 51 ns |
Turn-Off Delay Time | 78 ns |
Continuous Drain Current (ID) | 195A |
Threshold Voltage | 2.2V |
Gate to Source Voltage (Vgs) | 20V |