Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2007 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 230W |
Case Connection | DRAIN |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.8m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 7330pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 195A Tc |
Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
Rise Time | 70ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 53 ns |
Turn-Off Delay Time | 78 ns |
Continuous Drain Current (ID) | 195A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
DS Breakdown Voltage-Min | 40V |
Avalanche Energy Rating (Eas) | 802 mJ |
Recovery Time | 30 ns |
Nominal Vgs | 3 V |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |