Parameters | |
---|---|
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Number of Pins | 7 |
Weight | 1.59999g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 375W Tc |
Element Configuration | Single |
Power Dissipation | 375W |
Turn On Delay Time | 24 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.4m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12960pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 240A Tc |
Gate Charge (Qg) (Max) @ Vgs | 354nC @ 10V |
Rise Time | 102ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 79 ns |
Turn-Off Delay Time | 168 ns |
Continuous Drain Current (ID) | 240A |
Threshold Voltage | 3.7V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Max Junction Temperature (Tj) | 175°C |
Height | 5.084mm |
Length | 10.67mm |
Width | 9.65mm |