IRFS7537TRLPBF
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 173A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
| Rise Time | 105ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 84 ns |
| Turn-Off Delay Time | 82 ns |
| Continuous Drain Current (ID) | 173A |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 700A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 554 mJ |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | HEXFET®, StrongIRFET™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.3m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7020pF @ 25V |
See Relate Datesheet
