Parameters | |
---|---|
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.05m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 150μA |
Factory Lead Time | 1 Week |
Input Capacitance (Ciss) (Max) @ Vds | 10130pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 197A Tc |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
Rise Time | 85ns |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Drain to Source Voltage (Vdss) | 75V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Number of Pins | 6 |
Vgs (Max) | ±20V |
Weight | 1.59999g |
Fall Time (Typ) | 75 ns |
Transistor Element Material | SILICON |
Turn-Off Delay Time | 123 ns |
Operating Temperature | -55°C~175°C TJ |
Continuous Drain Current (ID) | 197A |
Packaging | Tape & Reel (TR) |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.00305Ohm |
Published | 2006 |
DS Breakdown Voltage-Min | 75V |
Series | HEXFET®, StrongIRFET™ |
Height | 4.83mm |
Length | 10.54mm |
Part Status | Active |
Width | 9.65mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Number of Terminations | 6 |
Lead Free | Lead Free |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 294W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |