Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 9.4A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 48W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 48W |
Case Connection | DRAIN |
Turn On Delay Time | 4.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 210m Ω @ 5.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 9.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 23ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Factory Lead Time | 1 Week |
Turn-Off Delay Time | 32 ns |
Mount | Through Hole |
Continuous Drain Current (ID) | 9.4A |
Mounting Type | Through Hole |
Threshold Voltage | 4V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Gate to Source Voltage (Vgs) | 20V |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Drain Current-Max (Abs) (ID) | 7.7A |
Packaging | Tube |
Published | 1998 |
Drain to Source Breakdown Voltage | 100V |
Series | HEXFET® |
Dual Supply Voltage | 100V |
Recovery Time | 150 ns |
JESD-609 Code | e3 |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 4 V |
Part Status | Active |
Height | 9.75mm |
Length | 6.6mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Width | 2.3mm |
Number of Terminations | 3 |
REACH SVHC | No SVHC |
Termination | Through Hole |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |
ECCN Code | EAR99 |
Resistance | 210mOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |