IRFU120ZPBF
| Parameters | |
|---|---|
| Input Capacitance | 310pF |
| Recovery Time | 36 ns |
| Drain to Source Resistance | 190mOhm |
| Rds On Max | 190 mΩ |
| Nominal Vgs | 4 V |
| Height | 6.22mm |
| Length | 6.7056mm |
| Width | 2.3876mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Supplier Device Package | IPAK (TO-251) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Resistance | 190MOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 8.7A |
| Power Dissipation-Max | 35W Tc |
| Power Dissipation | 35W |
| Turn On Delay Time | 8.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 26ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 8.7A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
See Relate Datesheet
