IRFU1N60APBF
| Parameters | |
|---|---|
| Number of Channels | 1 |
| Power Dissipation-Max | 36W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 36W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7 Ω @ 840mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 229pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 14ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 1.4A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 7Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 5.6A |
| Height | 6.22mm |
| Length | 6.73mm |
| Width | 2.38mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Weight | 329.988449mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
See Relate Datesheet
