Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Supplier Device Package | IPAK (TO-251) |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Through Hole |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 110W Tc |
Power Dissipation | 110W |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 16mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 2190pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Rise Time | 65ns |
Drain to Source Voltage (Vdss) | 75V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 29 ns |
Turn-Off Delay Time | 44 ns |
Reverse Recovery Time | 31 ns |
Continuous Drain Current (ID) | 53A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 75V |
Dual Supply Voltage | 75V |
Input Capacitance | 2.19nF |
Recovery Time | 47 ns |
Drain to Source Resistance | 16mOhm |
Rds On Max | 16 mΩ |
Nominal Vgs | 4 V |
Height | 6.22mm |
Length | 6.7056mm |
Width | 2.3876mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |