Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Supplier Device Package | IPAK (TO-251) |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2003 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 42A |
Power Dissipation-Max | 110W Tc |
Power Dissipation | 110W |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 14.5mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Rise Time | 66ns |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 31 ns |
Continuous Drain Current (ID) | 59A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 55V |
Input Capacitance | 1.38nF |
Drain to Source Resistance | 14.5mOhm |
Rds On Max | 14.5 mΩ |
Height | 6.22mm |
Length | 6.7056mm |
Width | 2.3876mm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |