Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 18MOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 42A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Lead Pitch | 2.28mm |
Lead Length | 9.65mm |
Number of Elements | 1 |
Power Dissipation-Max | 140W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 140W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 18m Ω @ 33A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Rise Time | 43ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 42 ns |
Turn-Off Delay Time | 53 ns |
Continuous Drain Current (ID) | 42A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 56A |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 220A |
Dual Supply Voltage | 100V |
Avalanche Energy Rating (Eas) | 150 mJ |
Recovery Time | 53 ns |
Nominal Vgs | 4 V |
Height | 6.1mm |
Length | 6.6mm |
Width | 2.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |