Parameters | |
---|---|
Power Dissipation | 52W |
Case Connection | DRAIN |
Turn On Delay Time | 6.4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 115m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 16A Tc |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Rise Time | 27ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 37 ns |
Continuous Drain Current (ID) | 16A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 15A |
Drain-source On Resistance-Max | 0.115Ohm |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 60A |
Dual Supply Voltage | 100V |
Avalanche Energy Rating (Eas) | 150 mJ |
Nominal Vgs | 4 V |
Height | 6.22mm |
Length | 6.7056mm |
Width | 2.3876mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 1998 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 16A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Qualification Status | Not Qualified |
Lead Pitch | 2.28mm |
Lead Length | 9.65mm |
Number of Elements | 1 |
Power Dissipation-Max | 79W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |