Parameters | |
---|---|
Vgs (Max) | ±20V |
Mount | Through Hole |
Fall Time (Typ) | 36 ns |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Turn-Off Delay Time | 37 ns |
Number of Pins | 3 |
Continuous Drain Current (ID) | 119A |
Operating Temperature | -55°C~175°C TJ |
Threshold Voltage | 4V |
Packaging | Tube |
Gate to Source Voltage (Vgs) | 20V |
Published | 2010 |
Series | HEXFET® |
Drain to Source Breakdown Voltage | 40V |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Dual Supply Voltage | 40V |
Termination | Through Hole |
Recovery Time | 42 ns |
Voltage - Rated DC | 40V |
Technology | MOSFET (Metal Oxide) |
Nominal Vgs | 4 V |
Height | 6.22mm |
Current Rating | 119A |
Length | 6.7056mm |
Lead Pitch | 2.28mm |
Width | 2.3876mm |
Lead Length | 9.65mm |
Radiation Hardening | No |
Power Dissipation-Max | 140W Tc |
REACH SVHC | No SVHC |
Element Configuration | Single |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Power Dissipation | 140W |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 5.5m Ω @ 42A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
Rise Time | 69ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |