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IRFU4104PBF

MOSFET N-CH 40V 42A I-PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFU4104PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 838
  • Description: MOSFET N-CH 40V 42A I-PAK (Kg)

Details

Tags

Parameters
Vgs (Max) ±20V
Mount Through Hole
Fall Time (Typ) 36 ns
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Turn-Off Delay Time 37 ns
Number of Pins 3
Continuous Drain Current (ID) 119A
Operating Temperature -55°C~175°C TJ
Threshold Voltage 4V
Packaging Tube
Gate to Source Voltage (Vgs) 20V
Published 2010
Series HEXFET®
Drain to Source Breakdown Voltage 40V
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Dual Supply Voltage 40V
Termination Through Hole
Recovery Time 42 ns
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Nominal Vgs 4 V
Height 6.22mm
Current Rating 119A
Length 6.7056mm
Lead Pitch 2.28mm
Width 2.3876mm
Lead Length 9.65mm
Radiation Hardening No
Power Dissipation-Max 140W Tc
REACH SVHC No SVHC
Element Configuration Single
RoHS Status RoHS Compliant
Lead Free Lead Free
Power Dissipation 140W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 69ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet

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