IRFU4105ZPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Vgs (Max) | ±20V |
| Mount | Through Hole |
| Fall Time (Typ) | 24 ns |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Turn-Off Delay Time | 26 ns |
| Number of Pins | 3 |
| Continuous Drain Current (ID) | 30A |
| Transistor Element Material | SILICON |
| Threshold Voltage | 4V |
| Operating Temperature | -55°C~175°C TJ |
| Gate to Source Voltage (Vgs) | 20V |
| Packaging | Tube |
| Published | 2003 |
| Drain-source On Resistance-Max | 0.0245Ohm |
| Series | HEXFET® |
| Drain to Source Breakdown Voltage | 55V |
| JESD-609 Code | e3 |
| Pulsed Drain Current-Max (IDM) | 120A |
| Part Status | Obsolete |
| Dual Supply Voltage | 55V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Avalanche Energy Rating (Eas) | 29 mJ |
| Number of Terminations | 3 |
| Recovery Time | 29 ns |
| Nominal Vgs | 4 V |
| Termination | Through Hole |
| Height | 6.1mm |
| ECCN Code | EAR99 |
| Length | 6.6mm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Width | 2.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| RoHS Status | ROHS3 Compliant |
| Subcategory | FET General Purpose Power |
| Lead Free | Lead Free |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 30A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Lead Pitch | 2.28mm |
| Lead Length | 9.65mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 48W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 48W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 24.5m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
See Relate Datesheet
