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IRFZ44VPBF

IRFZ44VPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFZ44VPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 773
  • Description: IRFZ44VPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1812pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 97ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 220A
Dual Supply Voltage 60V
Recovery Time 105 ns
Nominal Vgs 4 V
Height 8.77mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 55A
Number of Elements 1
Power Dissipation-Max 115W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 115W
See Relate Datesheet

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