Parameters | |
---|---|
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 53A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.8W Ta 107W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 120W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16.5m Ω @ 28A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1696pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 53A Tc |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Rise Time | 76ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 57 ns |
Turn-Off Delay Time | 52 ns |
Continuous Drain Current (ID) | 53A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0165Ohm |
Drain to Source Breakdown Voltage | 55V |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Pulsed Drain Current-Max (IDM) | 180A |
Avalanche Energy Rating (Eas) | 152 mJ |
Mounting Type | Through Hole |
Height | 9.65mm |
Length | 10.668mm |
Width | 4.826mm |
Radiation Hardening | No |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Number of Pins | 3 |
Lead Free | Lead Free |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |