IRG4BC10SD
| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 38W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 28ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 14A |
| Turn On Time | 106 ns |
| Test Condition | 480V, 8A, 100 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) | 1780 ns |
| Gate Charge | 15nC |
| Current - Collector Pulsed (Icm) | 18A |
| Td (on/off) @ 25°C | 76ns/815ns |
| Switching Energy | 310μJ (on), 3.28mJ (off) |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | LOW CONDUCTION LOSS |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
See Relate Datesheet
