IRG4BC15UD-LPBF
| Parameters | |
|---|---|
| Gate-Emitter Thr Voltage-Max | 6V |
| Height | 9.652mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Weight | 2.084002g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 49W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 14A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 49W |
| Input Type | Standard |
| Turn On Delay Time | 17 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 20ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 160 ns |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 14A |
| Reverse Recovery Time | 28 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.02V |
| Turn On Time | 37 ns |
| Test Condition | 480V, 7.8A, 75 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 7.8A |
| Turn Off Time-Nom (toff) | 400 ns |
| Gate Charge | 23nC |
| Current - Collector Pulsed (Icm) | 42A |
| Td (on/off) @ 25°C | 17ns/160ns |
| Switching Energy | 240μJ (on), 260μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
See Relate Datesheet
