IRG4BC20FD-S
| Parameters | |
|---|---|
| Turn On Time | 63 ns |
| Test Condition | 480V, 9A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Turn Off Time-Nom (toff) | 610 ns |
| Gate Charge | 27nC |
| Current - Collector Pulsed (Icm) | 64A |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 250μJ (on), 640μJ (off) |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | MATTE TIN OVER NICKEL |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 60W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 37ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 16A |
See Relate Datesheet
