Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.6V |
Max Collector Current | 19A |
Reverse Recovery Time | 37 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.4V |
Turn On Time | 99 ns |
Test Condition | 480V, 10A, 50 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 10A |
Turn Off Time-Nom (toff) | 1780 ns |
Gate Charge | 27nC |
Current - Collector Pulsed (Icm) | 38A |
Td (on/off) @ 25°C | 62ns/690ns |
Switching Energy | 320μJ (on), 2.58mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 60W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 19A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 60W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 32ns |