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IRG4BC20UD-SPBF

IRG4BC20UD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC20UD-SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 715
  • Description: IRG4BC20UD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 13A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 13A
Reverse Recovery Time 37 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 55 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 39ns/93ns
Switching Energy 160μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 170ns
Height 4.699mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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