Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 60W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 37ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 13A |
Power Dissipation-Max (Abs) | 60W |
Turn On Time | 55 ns |
Test Condition | 480V, 6.5A, 50 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 6.5A |
Turn Off Time-Nom (toff) | 320 ns |
Gate Charge | 27nC |
Current - Collector Pulsed (Icm) | 52A |
Td (on/off) @ 25°C | 39ns/93ns |
Switching Energy | 160μJ (on), 130μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 170ns |
RoHS Status | RoHS Compliant |