Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2010 |
JESD-609 Code | e3 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 100W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 31A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 100W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 27ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.8V |
Max Collector Current | 31A |
Reverse Recovery Time | 42 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.8V |
Turn On Time | 69 ns |
Test Condition | 480V, 17A, 23 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
Turn Off Time-Nom (toff) | 620 ns |
Gate Charge | 51nC |
Current - Collector Pulsed (Icm) | 124A |
Td (on/off) @ 25°C | 42ns/230ns |
Switching Energy | 630μJ (on), 1.39mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Height | 4.699mm |
Length | 10.668mm |
Width | 9.652mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |