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IRG4BC30FD-SPBF

IRG4BC30FD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC30FD-SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 451
  • Description: IRG4BC30FD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 31A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 27ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 69 ns
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 124A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 4.699mm
Length 10.668mm
Width 9.652mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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