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IRG4BC30FD1PBF

IRG4BC30FD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC30FD1PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 829
  • Description: IRG4BC30FD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 31A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 24ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 46 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 46 ns
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 740 ns
Gate Charge 57nC
Current - Collector Pulsed (Icm) 124A
Td (on/off) @ 25°C 22ns/250ns
Switching Energy 370μJ (on), 1.42mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 15.24mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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