IRG4BC30S-S
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 100W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 34A |
| Power Dissipation-Max (Abs) | 100W |
| Turn On Time | 40 ns |
| Test Condition | 480V, 18A, 23 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 18A |
| Turn Off Time-Nom (toff) | 1550 ns |
| Gate Charge | 50nC |
| Current - Collector Pulsed (Icm) | 68A |
| Td (on/off) @ 25°C | 22ns/540ns |
| Switching Energy | 260μJ (on), 3.45mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 590ns |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
