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IRG4BC30UPBF

IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC30UPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 747
  • Description: IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 23A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 ns
Transistor Application POWER CONTROL
Rise Time 9.6ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 78 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 23A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 1.1nF
Turn On Time 33 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/78ns
Switching Energy 160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 150ns
Height 16.51mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
See Relate Datesheet

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