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IRG4BC30W-S

IRG4BC30W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC30W-S
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 502
  • Description: IRG4BC30W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG4BC30W-S
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Turn On Time 41 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
RoHS Status Non-RoHS Compliant
See Relate Datesheet

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