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IRG4BC40FPBF

IRG4BC40FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC40FPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 771
  • Description: IRG4BC40FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 26 ns
Transistor Application POWER CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 49A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 46 ns
Test Condition 480V, 27A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 27A
Turn Off Time-Nom (toff) 690 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 196A
Td (on/off) @ 25°C 26ns/240ns
Switching Energy 370μJ (on), 1.81mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Terminal Position SINGLE
Current Rating 49A
Number of Elements 1
Element Configuration Dual
Power Dissipation 160W
See Relate Datesheet

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