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IRG4BC40W-LPBF

IRG4BC40W-LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC40W-LPBF
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 918
  • Description: IRG4BC40W-LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084002g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 40A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Dual
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 22ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.36V
Turn On Time 48 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 294 ns
Gate Charge 98nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 27ns/100ns
Switching Energy 110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 9.652mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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