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IRG4BC40WPBF

IGBT 600V 40A 160W TO220AB


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4BC40WPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 162
  • Description: IGBT 600V 40A 160W TO220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Transistor Application POWER CONTROL
Rise Time 22ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Input Capacitance 1.9nF
Turn On Time 49 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 174 ns
Gate Charge 98nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 27ns/100ns
Switching Energy 110μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet

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