Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2000 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 160W |
Current Rating | 40A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 160W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 27 ns |
Transistor Application | POWER CONTROL |
Rise Time | 22ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 100 ns |
Collector Emitter Voltage (VCEO) | 2.5V |
Max Collector Current | 40A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.5V |
Input Capacitance | 1.9nF |
Turn On Time | 49 ns |
Test Condition | 480V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Turn Off Time-Nom (toff) | 174 ns |
Gate Charge | 98nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 27ns/100ns |
Switching Energy | 110μJ (on), 230μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 110ns |
Height | 8.77mm |
Length | 10.54mm |
Width | 4.69mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |