Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 11A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Element Configuration | Dual |
Power Dissipation | 60W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 23 ns |
Transistor Application | POWER CONTROL |
Rise Time | 26ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 93 ns |
Collector Emitter Voltage (VCEO) | 4.3V |
Max Collector Current | 11A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.17V |
Turn On Time | 51 ns |
Test Condition | 960V, 5A, 50 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
Turn Off Time-Nom (toff) | 720 ns |
Gate Charge | 28nC |
Current - Collector Pulsed (Icm) | 22A |
Td (on/off) @ 25°C | 23ns/93ns |
Switching Energy | 450μJ (on), 440μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 400ns |
Height | 9.65mm |
Length | 10.668mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead, Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Weight | 2.084002g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | ULTRA FAST, LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 60W |
Terminal Position | SINGLE |