Parameters | |
---|---|
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.15V |
Turn On Time | 56 ns |
Test Condition | 480V, 5A, 100 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 5A |
Turn Off Time-Nom (toff) | 345 ns |
Gate Charge | 15nC |
Current - Collector Pulsed (Icm) | 27A |
Td (on/off) @ 25°C | 40ns/87ns |
Switching Energy | 140μJ (on), 120μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 210ns |
Height | 16.129mm |
Length | 10.7442mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Additional Feature | ULTRA FAST |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 25W |
Current Rating | 6.8A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 25W |
Case Connection | ISOLATED |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 16ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.6V |
Max Collector Current | 6.8A |
Reverse Recovery Time | 28 ns |