banner_page

IRG4IBC10UDPBF

IRG4IBC10UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4IBC10UDPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 612
  • Description: IRG4IBC10UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 56 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 25W
Current Rating 6.8A
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 6.8A
Reverse Recovery Time 28 ns
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good