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IRG4IBC20FDPBF

IGBT 600V 14.3A 34W TO220FP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4IBC20FDPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 339
  • Description: IGBT 600V 14.3A 34W TO220FP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 34W
Current Rating 14.3A
Number of Elements 1
Element Configuration Single
Power Dissipation 34W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 14.3A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 63 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 610 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 16.129mm
Length 10.7442mm
Width 4.826mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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