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IRG4IBC30KDPBF

IRG4IBC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4IBC30KDPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 152
  • Description: IRG4IBC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 45W
Current Rating 17A
Number of Elements 1
Element Configuration Single
Power Dissipation 45W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application POWER CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 17A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 100 ns
Test Condition 480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 16.129mm
Length 10.7442mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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