banner_page

IRG4IBC30SPBF

IRG4IBC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4IBC30SPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 254
  • Description: IRG4IBC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 45W
Terminal Position SINGLE
Current Rating 23.5A
Number of Elements 1
Element Configuration Dual
Power Dissipation 45W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Rise Time 19ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 540 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 23.5A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 40 ns
Test Condition 480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Turn Off Time-Nom (toff) 1550 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 47A
Td (on/off) @ 25°C 22ns/540ns
Switching Energy 260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 590ns
Height 16.12mm
Length 10.6172mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good