Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 1998 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 160W |
Current Rating | 40A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 160W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 54 ns |
Transistor Application | POWER CONTROL |
Rise Time | 57ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 110 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 40A |
Reverse Recovery Time | 42 ns |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.15V |
Turn On Time | 92 ns |
Test Condition | 480V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
Max Junction Temperature (Tj) | 150°C |
Continuous Collector Current | 40A |
Turn Off Time-Nom (toff) | 330 ns |
Gate Charge | 100nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 54ns/110ns |
Switching Energy | 710μJ (on), 350μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 120ns |
Height | 24.6mm |
Length | 15.875mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |