IRG4PC50KPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2000 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 52A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 38 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 34ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 160 ns |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 52A |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.84V |
| Turn On Time | 72 ns |
| Test Condition | 480V, 30A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 430 ns |
| Gate Charge | 200nC |
| Current - Collector Pulsed (Icm) | 104A |
| Td (on/off) @ 25°C | 38ns/160ns |
| Switching Energy | 490μJ (on), 680μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 120ns |
| Height | 20.3mm |
| Length | 15.875mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
