banner_page

IRG4PC50SDPBF

IRG4PC50SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4PC50SDPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 468
  • Description: IRG4PC50SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 33 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 980 ns
Collector Emitter Voltage (VCEO) 1.36V
Max Collector Current 70A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.36V
Turn On Time 62 ns
Test Condition 480V, 41A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.36V @ 15V, 41A
Turn Off Time-Nom (toff) 1700 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 33ns/650ns
Switching Energy 720μJ (on), 8.27mJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good